3,305 research outputs found

    An Evaluation of the Optical Maser Photon Rate Gyroscope

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    Mathematical development of resonant frequencies of electromagnetic cavity - Evaluation of optical maser photon rate gyroscop

    Optical Maser Photon Rate Gyroscope

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    Resonant frequency equations for optical maser photon rate gyroscope desig

    Finite element formulation for linear thermoviscoelastic materials

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    Report presents the finite difference equations in time and finite element matrix equations in space for general linear thermovisoelastic problems. The equations are derived for a general three-dimensional body but are applicable to one- and two-dimensional configurations with minor changes

    Pressure seal Patent

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    Pressure seals suitable for use in environmental test chamber

    Landau level spectroscopy of ultrathin graphite layers

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    Far infrared transmission experiments are performed on ultrathin epitaxial graphite samples in a magnetic field. The observed cyclotron resonance-like and electron-positron-like transitions are in excellent agreement with the expectations of a single-particle model of Dirac fermions in graphene, with an effective velocity of c* = 1.03 x 10^6 m/s.Comment: 4 pages 4 figures Slight revisions following referees' comments. One figure modifie

    Few layer graphene on SiC, pyrolitic graphite and graphene: a Raman scattering study

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    The results of micro-Raman scattering measurements performed on three different ``graphitic'' materials: micro-structured disks of highly oriented pyrolytic graphite, graphene multi-layers thermally decomposed from carbon terminated surface of 4H-SiC and an exfoliated graphene monolayer are presented. Despite its multi-layer character, most parts of the surface of the graphitized SiC substrates shows a single-component, Lorentzian shape, double resonance Raman feature in striking similarity to the case of a single graphene monolayer. Our observation suggests a very weak electronic coupling between graphitic layers on the SiC surface, which therefore can be considered to be graphene multi-layers with a simple (Dirac-like) band structure.Comment: 4 pages, 3 Figures Structure of the paper strongly modified, small changes in Fig 2 and 3. Same interpretation and same result

    Experimental observation of nanoscale radiative heat flow due to surface plasmons in graphene and doped silicon

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    Owing to its two dimensional electronic structure, graphene exhibits many unique properties. One of them is a wave vector and temperature dependent plasmon in the infrared range. Theory predicts that due to these plasmons, graphene can be used as a universal material to enhance nanoscale radiative heat exchange for any dielectric substrate. Here we report on radiative heat transfer experiments between SiC and a SiO2 sphere which have non matching phonon polariton frequencies, and thus only weakly exchange heat in near field. We observed that the heat flux contribution of graphene epitaxially grown on SiC dominates at short distances. The influence of plasmons on radiative heat transfer is further supported with measurements for doped silicon. These results highlight graphenes strong potential in photonic nearfield and energy conversion devices.Comment: 4 pages, 3 figure

    Weak antilocalization in epitaxial graphene: evidence for chiral electrons

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    Transport in ultrathin graphite grown on silicon carbide is dominated by the electron-doped epitaxial layer at the interface. Weak anti-localization in 2D samples manifests itself as a broad cusp-like depression in the longitudinal resistance for magnetic fields 10 mT<B<< B < 5 T. An extremely sharp weak-localization resistance peak at B=0 is also observed. These features quantitatively agree with graphene weak-(anti)localization theory implying the chiral electronic character of the samples. Scattering contributions from the trapped charges in the substrate and from trigonal warping due to the graphite layer on top are tentatively identified. The Shubnikov-de Haas oscillations are remarkably small and show an anomalous Berry's phase.Comment: 5 pages, 4 figures. Minor change

    Tuning the electron-phonon coupling in multilayer graphene with magnetic fields

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    Magneto Raman scattering study of the E2g_{2g} optical phonons in multi-layer epitaxial graphene grown on a carbon face of SiC are presented. At 4.2K in magnetic field up to 33 T, we observe a series of well pronounced avoided crossings each time the optically active inter Landau level transition is tuned in resonance with the E2g_{2g} phonon excitation (at 196 meV). The width of the phonon Raman scattering response also shows pronounced variations and is enhanced in conditions of resonance. The experimental results are well reproduced by a model that gives directly the strength of the electron-phonon interaction.Comment: 4 pages, 3 figure

    Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

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    We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the sample is covered by 2-3 graphene layers. C1s spectromicroscopy provides an independent measurement of the graphene thickness distribution map. The work function, measured by photoelectron emission microscopy (PEEM), varies across the surface from 4.34 to 4.50eV according to both the graphene thickness and the graphene-SiC interface chemical state. At least two SiC surface chemical states (i.e., two different SiC surface structures) are present at the graphene/SiC interface. Charge transfer occurs at each graphene/SiC interface. K-space PEEM gives 3D maps of the k_|| pi - pi* band dispersion in micron scale regions show that the Dirac point shifts as a function of graphene thickness. Novel Bragg diffraction of the Dirac cones via the superlattice formed by the commensurately rotated graphene sheets is observed. The experiments underline the importance of lateral and spectroscopic resolution on the scale of future electronic devices in order to precisely characterize the transport properties and band alignments
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